Samsung late on Wednesday night said it has developed the world's first 4-gigabit (1GB) DDR3 SDRAM chip. The part is built on an ultra-dense 50 nanometer manufacturing process and would allow as much as 8GB of RAM on a single notebook memory stick, or twice as much as currently possible. It could also reach the same amount for typical desktop memory and as much as 16GB for the dual registered memory used with some server and workstation PCs.
The smaller process also reduces the amount of wasted power and therefore heat, rendering it more efficient than regular DDR3 memory. Samsung estimates at least a 20 percent power savings over a typical 2-gigabit stick and as much as 40 percent for a 16GB stick. It should also be relatively fast with a single chip transferring data at up to 1.6 gigabits per second.
Samsung doesn't say how soon it expects to mass produce the new memory, though it notes that it had already reached the 2Gb mark with 50 nanometer memory in September.
Source: electronista
