Increasing the speed and efficiency of racetrack memory

Increasing the speed and efficiency of racetrack memoryRacetrack memory has attracted attention in the last two years because it's a possible replacement for flash and conventional magnetic disks. Racetrack memory devices can potentially have storage densities hundreds of times greater than flash memories, but read/write speed and power consumption remain substantial technological hurdles. The problems arise from the physics of racetrack memory devices, so performance gains must come from an improved scientific understanding of the underlying processes rather than improved device fabrication.

In a nutshell, racetrack memory works by cycling magnetic domains (bits of memory) along ferromagnetic nanowires using a spin polarized current. A transistor in the center of the wire reads and writes data as the bits are moved up and down the nanowirewire. For a full description of the technology, check out Matt Ford's previous coverage.

The key to increasing speed and efficiency in racetrack memory devices is understanding the interaction between spin polarized current and domain wall motion in the nanowires. A team from Texas A&M University recently solved the equations of motion for magnetic domain walls in nanowires under various current conditions. They found that both the efficiency and speed of domain wall motion could be dramatically increased using a series of current pulses rather than DC, AC, or a combination of the two. Most importantly, they show that the optimum pulse conditions can be calculated using basic electrical properties of the nanowire, which are relatively easy to measure.

There is a lot to like here, but one important aspect is the choice of model. Most work on domain wall motion relies on complex numerical codes that tend to hide the underlying physics of the process. This work uses much more basic magnetisation theory so that the physics and implications of the model are transparent and understandable. The conclusions provide clear, testable conditions that can be realized in the lab, and, if the predictions are accurate, demonstrable increases in device speed and efficiency.

Source: ars technica

Comments
Add comment

Your name:
Sign in with:
or
Your comment:


Enter code:

E-mail (not required)
E-mail will not be disclosed to the third party


Last news

 
Galaxy Note10 really is built around a 6.7-inch display
 
You may still be able to download your content
 
Facebook, Messenger and Instagram are all going away
 
Minimize apps to a floating, always-on-top bubble
 
Japan Display has been providing LCDs for the iPhone XR, the only LCD model in Apple’s 2018 line-up
 
The 2001 operating system has reached its lowest share level
 
The entire TSMC 5nm design infrastructure is available now from TSMC
 
The smartphone uses a Snapdragon 660 processor running Android 9 Pie
The Samsung Galaxy A5 (2017) Review
The evolution of the successful smartphone, now with a waterproof body and USB Type-C
February 7, 2017 / 2
Samsung Galaxy TabPro S - a tablet with the Windows-keyboard
The first Windows-tablet with the 12-inch display Super AMOLED
June 7, 2016 /
Keyboards for iOS
Ten iOS keyboards review
July 18, 2015 /
Samsung E1200 Mobile Phone Review
A cheap phone with a good screen
March 8, 2015 / 4
Creative Sound Blaster Z sound card review
Good sound for those who are not satisfied with the onboard solution
September 25, 2014 / 2
Samsung Galaxy Gear: Smartwatch at High Price
The first smartwatch from Samsung - almost a smartphone with a small body
December 19, 2013 /
 
 

News Archive

 
 
SuMoTuWeThFrSa
    123
45678910
11121314151617
18192021222324
25262728293031




Poll

Do you use microSD card with your phone?
or leave your own version in comments (16)