Samsung this weekend announced it is the first to bring the highest-density memory modules for server systems to the industry. The 40nm, DDR3 memory doubles the previous highest capacity from 16GB to 32GB, while using up the same amount of power. The four gigabit DDR3 chips mark a significant step up from the 16GB, 50nm, 2Gb RDIMM module Samsung released last March.
The new memory module is made up of 36 dual-die DDR3 chips, and dual-CPU, two-way servers can support a system of up to 384GB. Previously, the highest available capacity was 192GB per server, though power decreases were at less than five percent. At the same time, putting six 32GB modules rather than 12 16GB modules mean faster operating speeds, at 1,066Mbps versus 800Mbps, thanks to a power decrease of 40 percent.
Mass production of the the 40nm, 32GB server memory begins in April. For the second half of 2010, Samsung plans to release 30nm-class memory for servers and PCs.
Source: electronista
