More rumors about the Galaxy S8 meant to increase the hype around Samsung's flagship smartphone continue to emerge. The latest news that we've got from China concerns the amount of memory inside the Galaxy S8, as well as the technology behind it.
If you've been following our Galaxy S8 news, then you already know the smartphone is rumored to pack 6GB of RAM and 256GB of internal memory.
However, a new rumor coming from China claims the Galaxy S8 will be the world's first smartphone to include 8GB of RAM.
According to the Chinese leakster, Samsung will start their own manufacture of 8GB RAM memory using their 10nm technology. On top of that, the 256GB of internal memory will benefit from UFS 2.1 flash storage technology.
An updated version of UFS 2.0, the new flash storage technology includes key improvements over earlier versions and it should provide data security through the use of inline cryptography between the system-on-chip (SoC) and the UFS storage device.
Add these new rumored features to an already very powerful smartphone and Samsung might have a winner.
The Galaxy S8 is supposed to be among the first handsets to pack Qualcomm's Snapdragon 835 processor inside, although rumor has it that the US-based company might not have the chipset ready until April.
Even though previous rumors claimed Samsung might adopt the dual-lens camera setup, a more recent report says otherwise, so we expect the Galaxy S8 to feature a single rear-facing photo snapper.
The only thing that remains to be determined is how many Galaxy S8 variants will be unveiled in late February at MWC 2017 trade fair.
Some reports say the standard Galaxy S8 will sport a 5.1-inch curved display, while the Plus model should boast a huge 6-inch curved screen with Quad HD (2560 x 1440 pixels) resolution.
